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afic31025n AFIC31025GN 1 rf device data nxp semiconductors rf ldmos integrated power amplifiers the afic31025n integrated circuit is designed with on--chip matching that makes it usable from 2400 to 3100 mhz. this multi--stage device is designed to support cw and pulse applications. typical performance: in 2400?3100 mhz reference circuit, v dd =32vdc frequency (mhz) signal type p out (w) g ps (db) ? d (%) 2400?2500 cw 25 30.0 45.5 2700?3100 pulse (300 ? sec, 15% duty cycle) 25 peak 22.0 40.0 features ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current te mperature compensation with enable/disable function (1) ? qualified up to a maximum of 32 v dd operation ? integrated esd protection typical applications ? civil s--band radar ? weather radar ? maritime radar ? industrial heating ? data links ? plasma generation figure 1. functional block diagram figure 2. pin connections note: exposed backside of the package is the source terminal for the transistor. quiescent current temperature compensation (1) v ds1a rf ina v gs1a rf out1 /v ds2a v gs2a quiescent current temperature compensation (1) v ds1b rf inb v gs1b rf out2 /v ds2b v gs2b vbw a vbw b v ds1a rf ina gnd rf inb rf out1 /v ds2a 1 2 3 4 7 8 15 v gs1b 9 10 11 v gs2a v gs1a n.c. n.c. v gs2b gnd v ds1b rf out2 /v ds2b 13 6 12 (top view) 5 14 gnd 16 17 vbw a vbw b carrier peaking 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family , and to an1987, quiescent current control for the rf integrated circuit device family. go to http://www.nxp.com/rf and search for an1977 or an1987. document number: afic31025n rev. 0, 10/2017 nxp semiconductors technical data 2400?3100 mhz, 25 w peak, 32 v airfast rf ldmos integrated power amplifiers afic31025n AFIC31025GN to--270wb--17 plastic afic31025n to--270wbg--17 plastic AFIC31025GN ? 2017 nxp b.v.
2 rf device data nxp semiconductors afic31025n AFIC31025GN table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1) t j ?40 to +225 ? c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (2) unit thermal resistance, junction to case case temperature 81 ? c, dc, total p d = 29.3 w stage 1, 28 vdc, p d =3.8w stage 2, 28 vdc, p d = 25.5 w r ? jc 5.85 1.92 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b charge device model (per jesd22--c101) ii table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics (3) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.0vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 1 -- on characteristics gate threshold voltage (3) (v ds =10vdc,i d =2.5 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v ds =28vdc,i dq1(a+b) =59madc) v gs(q) ? 2.0 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1(a+b) = 59 madc, measured in functional test) v gg(q) 4.6 5.3 6.1 vdc 1. continuous use at maximum temperature will affect mttf. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 3. each side of device measured separately. (continued)
afic31025n AFIC31025GN 3 rf device data nxp semiconductors table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 -- off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =1.0vdc,v ds =0vdc) i gss ? ? 1 ? adc stage 2 -- on characteristics gate threshold voltage (1) (v ds =10vdc,i d =16 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v ds =28vdc,i dq2(a+b) = 157 madc) v gs(q) ? 1.9 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2(a+b) = 157 madc, measured in functional test) v gg(q) 4.3 5.0 5.8 vdc drain--source on--voltage (1) (v gs =10vdc,i d = 200 madc) v ds(on) 0.1 0.22 1.5 vdc 1. each side of device measured separately. (continued)
4 rf device data nxp semiconductors afic31025n AFIC31025GN table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in nxp production test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =59ma,i dq2(a+b) = 157 ma, p out = 3.2 w avg., f = 2690 mhz, single--carrier w--cdma, iq magni tude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 30.5 31.9 34.5 db power added efficiency pae 18.0 19.7 ? % load mismatch (in nxp production test fixture, 50 ohm system) i dq1(a+b) =59ma,i dq2(a+b) = 157 ma, f = 2600 mhz vswr 10:1 at 32 vdc, 36 w cw output power (3 db input overdrive from 25 w cw rated power) no device degradation table 6. ordering information device tape and reel information package afic31025nr1 r1 suffix = 500 units, 44 mm tape width, 13--reel to--270wb--17 AFIC31025GNr1 to--270wbg--17 1. part internally input and output matched. 2. measurements made with device in straight l ead configuration before any lead forming operation is applied. lead forming is used for gull wing (gn) parts.
afic31025n AFIC31025GN 5 rf device data nxp semiconductors package dimensions
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afic31025n AFIC31025GN 11 rf device data nxp semiconductors product documentation refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 oct. 2017 ? initial release of data sheet
12 rf device data nxp semiconductors afic31025n AFIC31025GN how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, repr esentation, or guarantee r egarding the sui tability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo, and airfast are trademarks of nxp b.v. all other pr oduct or service names are the property of their respective owners. e 2017 nxp b.v. document number: afic31025n rev. 0, 10/2017

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